sbl10xx, sblf10xx & sblb10xx series vishay semiconductors formerly general semiconductor document number 88725 www.vishay.com 01-jul-02 1 schottky barrier rectifier reverse voltage 30 and 40v forward current 10a 0.08 (2.032) 0.24 (6.096) 0.42 (10.66) 0.63 (17.02) 0.12 (3.05) 0.33 (8.38) mounting pad layout to-263ab dimensions in inches and (millimeters) 0.380 (9.65) 0.411 (10.45) 0.320 (8.13) 0.360 (9.14) 0.591 (15.00) 0.624 (15.85) 1 2 0.245 (6.22) min k 0.027 (0.686) 0.037 (0.940) 0.105 (2.67) 0.095 (2.41) 0.205 (5.20) 0.195 (4.95) k 0.160 (4.06) 0.190 (4.83) 0.045 (1.14) 0.055 (1.40) 0.021 (0.53) 0.014 (0.36) 0.110 (2.79) 0.140 (3.56) 0.090 (2.29) 0.110 (2.79) 0.047 (1.19) 0.055 (1.40) pin 1 pin 2 k - heatsink 0-0.01 (0-0.254) 0.060 (1.52) 0.405 (10.27) 0.383 (9.72) 0.191 (4.85) 0.171 (4.35) 0.600 (15.5) 0.580 (14.5) 0.560 (14.22) 0.530 (13.46) 0.037 (0.94) 0.027 (0.69) 0.140 (3.56) 0.130 (3.30) 0.350 (8.89) 0.330 (8.38) 0.188 (4.77) 0.172 (4.36) 0.110 (2.80) 0.100 (2.54) 0.131 (3.39) 0.122 (3.08) 0.110 (2.80) 0.100 (2.54) 0.022 (0.55) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) 12 pin dia. dia. pin 1 pin 2 0.676 (17.2) 0.646 (16.4) ito-220ac (sblf10xx) to-220ac (sbl10xx) to-263ab (sblb10xx) 0.154 (3.91) 0.148 (3.74) dia. 0.113 (2.87) 0.103 (2.62) 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.145 (3.68) 0.135 (3.43) 0.350 (8.89) 0.330 (8.38) 0.160 (4.06) 0.140 (3.56) 0.037 (0.94) 0.027 (0.68) 0.205 (5.20) 0.195 (4.95) 0.560 (14.22) 0.530 (13.46) 0.022 (0.56) 0.014 (0.36) 0.110 (2.79) 0.100 (2.54) 12 1.148 (29.16) 1.118 (28.40) 0.105 (2.67) 0.095 (2.41) 0.410 (10.41) 0.390 (9.91) 0.635 (16.13) 0.625 (15.87) 0.603 (15.32) 0.573 (14.55) pin 0.415 (10.54) max. pin 1 pin 2 case 0.370 (9.40) 0.360 (9.14) mechanical data case: jedec to-220ac, ito-220ac & to-263ab molded plastic body terminals: plated leads, solderable per mil-std-750, method 2026 polarity: as marked mounting position: any mounting torque: 10 in-lbs maximum weight: 0.08 oz., 2.24 g features ?plastic package has underwriters laboratory flammability classification 94v-0 ?dual rectifier construction, positive center tap ?metal silicon junction, majority carrier conduction ?low power loss, high efficiency ?guardring for overvoltage protection ?for use in low voltage, high frequency inverters, free wheeling, and polarity protection applications ?high temperature soldering guaranteed: 250?/10 seconds, 0.25" (6.35mm) from case
sbl10xx, sblf10xx & sblb10xx series vishay semiconductors formerly general semiconductor www.vishay.com document number 88725 2 01-jul-02 maximum ratings (t c = 25? unless otherwise noted) parameter symbol SBL1030 sbl1040 unit maximum repetitive peak reverse voltage v rrm 30 40 v working peak reverse voltage v rwm 21 28 v maximum dc blocking voltage v dc 30 40 v maximum average forward rectified current at tc = 110 ? i f(av) 10 a peak forward surge current 8.3ms single half sine-wave superimposed i fsm 250 a on rated load (jedec method) operating junction and storage temperature range t j , t stg ?0 to +125 ? rms isolation voltage (sblf type only) from terminals 4500 (note 1) to heatsink with t = 1 second, rh 30% v isol 3500 (note 2) v 1500 (note 3) electrical characteristics (t c = 25? unless otherwise noted) parameter symbol value unit maximum instantaneous forward voltage v f 0.60 v at 10a (note 4) maximum instantaneous reverse current t c = 25? 1.0 at dc blocking voltage (note 4) t c = 100? i r 50 ma thermal characteristics (t c = 25? unless otherwise noted) parameter symbol sbl sblf sblb unit typical thermal resistance from junction to case per leg r jc 2.0 5.0 2.0 ?/w notes: (1) clip mounting (on case), where lead does not overlap heatsink with 0.110 offset (2) clip mounting (on case), where leads do overlap heatsink (3) screw mounting with 4-40 screw, where washer diameter is 4.9 mm (0.19? (4) pulse test: 300 s pulse width, 1% duty cycle
sbl10xx, sblf10xx & sblb10xx series vishay semiconductors formerly general semiconductor document number 88725 www.vishay.com 01-jul-02 3 ratings and characteristic curves (t a = 25? unless otherwise noted) i f instantaneous forward current (a) 100 10 i r instantaneous reverse current typical reverse characteristics 1.0 0.1 0.01 forward current derating curve 0 2.5 5 7.5 12.5 0 50 100 150 10 average forward current (a) peak forward surge current (a) number of cycles at 60 h z maximum non-repetitive peak forward surge current 0 50 150 100 250 200 300 110 100 t j = t j max. 8.3ms single half sine-wave (jedec method) case temperature ( c) 1.0 10 50 0.01 0.001 0.1 t j = 125 c 75 c 25 c resistive or inductive load transient thermal impedance ( c/w) 0.01 110 100 10 100 0.1 0.1 1 t pulse duration (sec.) t j = 25 c t j = 125 c typical junction capacitance pf junction capacitance 110 100 1,000 4,000 100 0.1 reverse voltage (v) t j = 25 c f = 1.0 mh z v sig = 50mvp-p instantaneous forward voltage (v) 0 0.2 0.6 1.2 0.4 0.8 1.0 pulse width = 300 s 1% duty cycle 0 20 100 40 60 80 typical transient thermal impedance percent of rated peak reverse voltage (%) typical instantaneous forward characteristics
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